Name :GaAs
Application.:IR and And high brightness red, orange, yellow LED, the field of semiconductor lasers


Item GaAs
Dopant Si Zn
Carrier(cm-3) (2~50)×1017 (2~50)×1018
Mobility(cm2/v.s) 1000~3500 50~100
EPD(cm-2) <5000, <1000 <10000
Diameter(mm) 50.8±0.5, 62±0.5 50.8±0.5
Reference planes length(mm) 16±1, 7±1
Thickness(µm) (210400)± 20
Orientation (100)±0.5°, (100) to (111) A (2°~15°)
Wafer surface state Slicing, lapped slices, corrosion coupons, polished wafer
TTV(µm) <10
Warp(µm) <10


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